HC6856 Datasheet, PDF (9/12 Pages) Honeywell Solid State Electronics Center – 32K x 8 STATIC RAM

TESTER AC TIMING CHARACTERISTICS
TTL I/O Configuration
3V
Input
1.5 V
Levels*
0V
HC6856
CMOS I/O Configuration
VDD-0.5 V
0.5 V
VDD/2
1.5 V
Output
Sense
Levels
High Z
VDD-0.4V
High Z
0.4 V
3.4 V
2.4 V
High Z = 2.9V
* Input rise and fall times <1 ns/V
VDD/2
VDD-0.4V
High Z
0.4 V
High Z
3.4 V
2.4 V
High Z = 2.9V
QUALITY AND RADIATION HARDNESS
ASSURANCE
Honeywell maintains a high level of product integrity through
process control, utilizing statistical process control, a com-
plete “Total Quality Assurance System,” a computer data
base process performance tracking system, and a radia-
tion hardness assurance strategy.
The radiation hardness assurance strategy starts with a
technology that is resistant to the effects of radiation.
Radiation hardness is assured on every wafer by irradiating
test structures as well as SRAM product, and then monitor-
ing key parameters which are sensitive to ionizing radia-
tion. Conventional MIL-STD-883 TM 5005 Group E testing,
which includes total dose exposure with Cobalt 60, may
also be performed as required. This Total Quality approach
ensures our customers of a reliable product by engineering
in reliability, starting with process development and con-
tinuing through product qualification and screening.
SCREENING LEVELS
Honeywell offers several levels of device screening to meet
your system needs. “Engineering Devices” are available
with limited performance and screening for breadboarding
and/or evaluation testing. Hi-Rel Level B and S devices
undergo additional screening per the requirements of MIL-
STD-883. As a QML supplier, Honeywell also offers QML
Class Q and V devices per MIL-PRF-38535 and are avail-
able per the applicable Standard Military Drawing (SMD).
QML devices offer ease of procurement by eliminating the
need to create detailed specifications and offer benefits of
improved quality and cost savings through standardization.
RELIABILITY
Honeywell understands the stringent reliability require-
ments that space and defense systems require and has
extensive experience in reliability testing on programs of
this nature. This experience is derived from comprehen-
sive testing of VLSI processes. Reliability attributes of the
RICMOS^™ process were characterized by testing specially
designed irradiated and non-irradiated test structures from
which specific failure mechanisms were evaluated. These
specific mechanisms included, but were not limited to, hot
carriers, electromigration and time dependent dielectric
breakdown. This data was then used to make changes to
the design models and process to ensure more reliable
products.
In addition, the reliability of the RICMOS^™ process and
product in a military environment was monitored by testing
irradiated and non-irradiated circuits in accelerated dy-
namic life test conditions. Packages are qualified for prod-
uct use after undergoing Groups B & D testing as outlined
in MIL-STD-883, TM 5005, Class S. The product is quali-
fied by following a screening and testing flow to meet the
customer’s requirements. Quality conformance testing is
performed as an option on all production lots to ensure the
ongoing reliability of the product.
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