HC6856 Datasheet, PDF (5/12 Pages) Honeywell Solid State Electronics Center – 32K x 8 STATIC RAM

DC ELECTRICAL CHARACTERISTICS
HC6856
Symbol
IDDSB1
IDDSB2
IDDOPW
IDDOPR
II
IOZ
VIL
Parameter
Static Supply Current
Typical Worst Case (2) _Units
(1) Min Max
0.02
1.2 mA
Static Supply Current with Chip Disabled
0.02
1.2 mA
Dynamic Supply Current, Selected (Write)
5.5
7.5 mA
Dynamic Supply Current, Selected (Read)
4.5
6.5 mA
Input Leakage Current
±0.05 -5 +5
µA
Output Leakage Current
±0.1 -10 10
µA
Low-Level InputVoltage
CMOS 1.9
TTL
1.3
0.3xVDD V
0.8 V
Test Conditions (3)
VIH=VDD IO=0
VIL=VSS Inputs Stable
CE=VSS or NCS=VDD
IO=0, VSS≤ VI≤VDD (4)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (5)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (5)
VSS≤VI≤VDD
VSS≤VIO≤VDD
Output=high Z
VDD=4.5V
VDD=4.5V
VIH
High-Level Input Voltage
VOL
Low-Level Output Voltage
VOH
High-Level Output Voltage
CMOS 3.0 0.7xVDD
TTL
1.7 2.2
0.2
0.4
0.05
4.8 4.2
VDD-0.05
V VDD=5.5V
V VDD=5.5V
V VDD=4.5V, IOL=10 mA
V VDD=4.5V, IOL=200 µA
V
VDD=4.5V, IOH=-5 mA
V
VDD=4.5V, IOH=-200 µA
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, TA=-55°C to +125°C, post total dose at 25°C.
(3) Input high = VIH ≥ VDD-0.3V, input low =VIL ≤ 0.3V
(4) Guaranteed but not tested.
(5) All inputs switching. DC average current.
DUT
output
2.9 V
249Ω
+
Vref1 -
Vref2 +
-
Valid high
output
Valid low
output
CL >50 pF*
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
Tester Equivalent Load Circuit
5