HMC618ALP3E Datasheet, PDF (5/16 Pages) Hittite Microwave Corporation – GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz

v00.1014
HMC618ALP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
7
1700 to 2200 MHz Tune
Output Return Loss vs. Temperature ^[1]
0
-5
-10
-15
-20
-25
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
+25 C
+85 C
2.2 2.3
- 40 C
Reverse Isolation vs. Temperature ^[1]
0
-5
-10
-15
-20
-25
-30
-35
-40
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Noise Figure vs Temperature ^{[1] [2] [3]}
1.6
1.4
1.2
+85C
1
+25 C
0.8
0.6
-40C
0.4
0.2
0
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
Output P1dB vs. Temperature ^{[1] [2]}
24
22
Vdd=5V
20
18
16
Vdd=3V
14
12
10
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
7-3
Psat vs. Temperature ^{[1] [2]}
24
Vdd=5V
22
20
Vdd=3V
18
16
14
12
10
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
+25 C
+85 C
2.2
2.3
-40 C
Output IP3 vs. Temperature ^{[1] [2]}
40
38
Vdd=5V
36
34
32
30
28
26
Vdd=3V
24
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
[3] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com
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