HMC618ALP3E Datasheet, PDF (12/16 Pages) Hittite Microwave Corporation – GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz

v00.1014
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 9.68 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6V
+10 dBm
150 °C
0.63 W
103.4 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A, Passed 250V
HMC618ALP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
7
Typical Supply Current vs. Vdd
Rbias = 10 KOhm for 3V
Rbias = 470 Ohm for 5V
Vdd (Vdc)
Idd (mA)
2.7
35
3.0
47
3.3
58
4.5
72
5.0
89
5.5
106
Note: Amplifier will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Part Number
Package Body Material
Lead Finish
HMC618LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
MSL Rating
MSL1 ^[1]
Package Marking ^[2]
618
XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com
Application Support: [e-mail]
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