HMC618ALP3E Datasheet, PDF (4/16 Pages) Hittite Microwave Corporation – GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz

v00.1014
HMC618ALP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Electrical Specifications
T_A = +25° C, Rbias = 10K Ohm for Vdd1 = Vdd2 = 3V
Parameter
Vdd = 3 Vdc
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
1200 - 1700
1700 - 2000
Gain
18
22
15
18
Gain Variation Over Temperature
0.009
0.009
Noise Figure
0.8
1.1
0.9
1.2
Input Return Loss
26
17
Output Return Loss
14
13
Output Power for 1 dB
Compression (P1dB)
10
15
12
15
Saturated Output Power (Psat)
16
16
Output Third Order Intercept (IP3)
28
28
Supply Current (Idd)
47
65
47
65
* Rbias resistor sets current, see application circuit herein
1700 to 2200 MHz Tune
Min.
Typ.
Max.
2000 - 2200
12.5
15.8
0.009
0.9
1.2
19
11
13
15
16
28
47
65
Units
MHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
Broadband Gain & Return Loss ^{[1] [2]}
26
S21
16
6
S22
-4
S11
-14
-24
0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
Gain vs. Temperature ^[1]
24
22
20
18
16
14
12
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
+25 C
+85 C
2.2 2.3
- 40 C
Gain vs. Temperature ^[2]
22
20
18
16
14
12
10
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
+25 C
+85 C
2.2
2.3
- 40 C
Input Return Loss vs. Temperature ^[1]
0
-5
-10
-15
-20
-25
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
+25 C
+85 C
2.2 2.3
- 40 C
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com
Application Support: [e-mail]
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