HMC618ALP3E Datasheet, PDF (11/16 Pages) Hittite Microwave Corporation – GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz

v00.1014
HMC618ALP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
7
1200 to 1700 MHz Tune
Psat vs. Temperature ^[1]
23
21
19
17
15
13
11
9
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Psat vs. Temperature ^[2]
23
21
19
17
15
13
11
9
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Output IP3 vs. Temperature ^[1]
38
36
34
32
30
28
26
24
22
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Output IP3 vs. Temperature ^[2]
38
36
34
32
30
28
26
24
22
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
Vdd1 = Vdd2 (V)
Min (Ohms)
Rbias
Max (Ohms)
R1 (Ohms)
1k
3V
1K ^[3]
Open Circuit
1.5k
10k
120
5V
0
Open Circuit
270
470
Idd1 + Idd2 (mA)
28
34
47
71
84
89
7-9
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
[3] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com
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