HMC618ALP3E Datasheet, PDF (13/16 Pages) Hittite Microwave Corporation – GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz

v00.1014
HMC618ALP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
7
Pin Description
Pin Number
Function
1, 3 - 5, 7, 9,
12, 14, 16
N/C
Description
No connection required. These pins may be connected
to RF/DC ground without affecting performance.
Interface Schematic
2
RFIN
This pin is DC coupled and matched to 50 Ohms.
6, 10
8
GND
RES
This pin and ground paddle must be
connected to RC/DC ground.
This pin is used to set the DC current of the amplifier
by selection of the external bias resistor.
See application circuit.
11
RFOUT
This pin is matched to 50 Ohms.
13, 15
Vdd2, Vdd1
Power Supply Voltage for the amplifier. External bypass
capacitors of 1000 pF, and 0.47 µF are required.
Application Circuit, 1700 to 2200 MHz Tune
7 - 11
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
978-250-3343 tel • 978-250-3373 fax • Order On-line at www.hittite.com
Application Support: [e-mail]