3SK309 Datasheet, PDF (8/11 Pages) Hitachi Semiconductor – GaAs N Channel Dual Gate MES FET UHF RF Amplifier

3SK309
10 p max
Power Gain, Noise Figure Test Circuit
V _G2
1000 pF
V_D
1000 pF
Unit : Resistance ( Ω )
Capacitance (F)
1000 pF
L1
47 k
RFC
1k
L3
L4
L2
Input
(50 Ω )
47 k
1000 pF
Output
(50 Ω )
10 p max
V _G1
L1 to L4 : φ1 mm copper wire
L1 :
4
6
32
L3 :
6
6
26
L2 :
25 ₅
7
90° 120°
L4 :
21 ₆
7
90° 120°
Unit : mm
RFC : 3 turn, 6 mm inside dia ( φ1 mm enameled copper wire)
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