3SK309 Datasheet, PDF (3/11 Pages) Hitachi Semiconductor – GaAs N Channel Dual Gate MES FET UHF RF Amplifier

Main Characteristics
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
3SK309
Typical Output Characteristics
20
–0.4 V
–0.6 V
–0.5 V
16
Pulse Test
12
–0.7 V
8
–0.8 V
4
–0.9 V
V_G1S = –1 V
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Drain Current vs.
Gate1 to Source Voltage
20
V_DS = 3 V
0V
–0.2 V
16
–0.4 V
–0.6 V
12
8
–0.8 V
4
V_G2S = –1 V
0
–2.0 –1.6 –1.2 –0.8 –0.4 0
Gate1 to Source Voltage V_G1S (V)
Drain Current vs.
Gate2 to Source Voltage
20
V_DS = 3 V
0V
–0.2 V
16
–0.4 V
–0.6 V
12
8
–0.8 V
4
0
V_G1S = –1 V
–2.0 –1.6 –1.2 –0.8 –0.4 0
Gate2 to Source Voltage V_G2S (V)
3