3SK309 Datasheet, PDF (2/11 Pages) Hitachi Semiconductor – GaAs N Channel Dual Gate MES FET UHF RF Amplifier

3SK309
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
6
V
–4
V
–4
V
18
mA
100
mW
125
°C
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Gate 1 to cutoff current
Symbol Min Typ
I _G1SS
—
—
Gate 2 to cutoff current
I _G2SS
—
—
Gate 1 to source cutoff voltage V_G1S(off) –0.2 —
Gate 2 to source cutoff voltage V_G2S(off) –0.2 —
Zero gate voltege drain current I_DSS
25
40
Forward transfer admittance |y_fs|
30
40
Power gain
Noise figure
Power gain
Noise figure
Note: Marking is “XV–”
PG
18
21
NF
—
1.25
PG
—
20
NF
—
1.3
Max
–20
–20
–1.5
–1.5
60
—
—
1.5
—
—
Unit
µA
µA
V
V
mA
mS
dB
dB
dB
dB
Test conditions
V_G1S = –4 V
V_G2S = V_DS = 0
V_G2S = –4 V
V_G1S = V_DS = 0
V_DS = 3 V, V_G2S = 0
I_D = 100 µA
V_DS = 3 V, V_G1S = 0
I_D = 100 µA
V_DS = 3 V, V_G1S = 0
V_G2S = 0
V_DS = 3 V, V_G2S = 0
I_D = 5 mA, f = 1 kHz
V_DS = 3 V, V_G2S = 0
I_D = 5 mA, f = 900 MHz
V_DS = 1.5 V, V_G2S = 0
I_D = 3 mA, f = 900 MHz
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