3SK309 Datasheet, PDF (4/11 Pages) Hitachi Semiconductor – GaAs N Channel Dual Gate MES FET UHF RF Amplifier

3SK309
Forward Transfer Admittance vs.
Gate1 to Source Voltage
100
V_DS = 3 V
f = 1 kHz
80
0V
60
–0.2 V
–0.4 V
40
–0.6 V
20
–0.8 V
V_G2S = –1 V
0
–2.0 –1.6 –1.2 –0.8 –0.4 0
Gate1 to Source Voltage V_G1S (V)
Power Gain vs. Drain Current
25
3V
20
V_DS = 1.5 V
15
10
5
V_G2S = 0
f = 900 MHz
0
4
8
12 16 20
Drain Current I _D (mA)
Forward Transfer Admittance vs.
Drain Current
100
V_DS = 3 V
V_G2S = 0
80 _{f = 1 kHz}
60
40
20
0
4
8
12 16 20
Drain Current I_D (mA)
Noise Figure vs. Drain Current
2.0
1.6
V_DS = 1.5 V
1.2
3V
0.8
0.4
V_G2S = 0
f = 900 MHz
0
4
8
12 16 20
Drain Current I _D (mA)
4