3SK309 Datasheet, PDF (1/11 Pages) Hitachi Semiconductor – GaAs N Channel Dual Gate MES FET UHF RF Amplifier

3SK309
GaAs N Channel Dual Gate MES FET
UHF RF Amplifier
Features
• Capable of low voltage operation (V_DS = 1.5 to 3 V)
• Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)
• High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-472 A
2nd. Edition