3SK309 Datasheet, PDF (5/11 Pages) Hitachi Semiconductor – GaAs N Channel Dual Gate MES FET UHF RF Amplifier

Power Gain vs.
Drain to Source Voltage
25
5 mA
20
I_D = 3 mA
15
10
5
V_G2S = 0
f = 900 MHz
0
12 3 4 56
Drain to Source Voltage V_DS (V)
Power Gain vs.
Gate2 to Source Voltage
25
20
15
10
V_G1S is fixed
for I_D = 5 mA
5
at V_G2S = 0
V_DS = 3 V
f = 900 MHz
0
–1 –0.8 –0.6 –0.4 –0.2 0
Gate2 to Source Voltage V_G2S (V)
3SK309
Noise Figure vs.
Drain to Source Voltage
2.0
1.6
3 mA
1.2
I_D = 5 mA
0.8
0.4
V_G2S = 0
f = 900 MHz
0
12 3 4 56
Drain to Source Voltage V_DS (V)
Gain Reduction vs.
Gate2 to Source Voltage
50
V_G1S is fixed
40
for I_D = 5 mA
at V_G2S = 0
V_DS = 3 V
30
f = 900 MHz
20
10
0
–1.5 –1.0 –0.5 0 0.5 1.0
Gate2 to Source Voltage V_G2S (V)
5