HAT2051T Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2051T
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1 _0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.001
0.01
1shot
pulse
0.0001
10 µ 100 µ 1 m
θ _{ch – f(t) =} γ _{s (t) •} θ _{ch – f}
θ _{ch – f = 225 °C/W, Ta = 25 °C}
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
4V
50Ω
VDD
= 10 V
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
7