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HAT2051T Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching | |||
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HAT2051T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
± 10
V
Drain current
ID
1
A
Drain peak current
I Note1
D(pulse)
4
A
Body-drain diode reverse drain current IDR
1
A
Channel dissipation
Pch Note2
0.8
W
Channel dissipation
Pch Note3
1.2
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
â 55 to + 150
°C
Note:
1. PW ⤠10µs, duty cycle ⤠1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW⤠10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW⤠10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
30
± 10
â
â
0.75
â
â
1.4
â
Output capacitance
Coss â
Reverse transfer capacitance
Crss â
Turn-on delay time
t d(on)
â
Rise time
tr
â
Turn-off delay time
t d(off)
â
Fall time
tf
â
Bodyâdrain diode forward voltage VDF
â
Bodyâdrain diode reverse
recovery time
t rr
â
Note: 4. Pulse test
Typ
â
â
â
â
â
0.14
0.2
2.2
155
75
35
12
30
35
25
0.81
35
Max
â
â
± 10
1
1.75
0.2
0.3
â
â
â
â
â
â
â
â
1.1
â
Unit
V
V
µA
µA
V
â¦
â¦
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 8 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 0.5 A, VGS = 10 V Note4
ID = 0.5 A, VGS = 4 V Note4
ID = 0.5 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1MHz
VGS = 4 V, ID = 0.5 A
VDD â
10 V
IF = 1 A, VGS = 0 Note4
IF = 1 A, VGS = 0
diF/ dt = 20 A/µs
2
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