HAT2051T Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2051T
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 20 A/µs
5
V_GS = 0, Ta = 25°C
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I _DR (A)
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
30
Coss
Crss
10
3
1
0 10 20 30 40 50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
10
I _D= 1 A
40 V _DD = 5 V
10 V
20 V
30
8
V_GS
6
20 ^VDS
4
10
V _DD = 20 V
2
10 V
5V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Switching Characteristics
100
50
t _d(off)
tf
20
tr
10
t _d(on)
5
2 _{VGS = 4 V, V DD = 10 V}
1 ^{PW = 5 µs, duty < 1 %}
0.01 0.02 0.05 0.1 0.2
0.5 1
Drain Current I _D (A)
5