HAT2051T Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Main Characteristics
HAT2051T
Power vs. Temperature Derating
2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1.0
0.5
1
2
Drive
DOrpiveerOatpioernation
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
10
3
1
0.3
0.1
0.03
0.01
10 µs
OtlihmpisietearadretibDoayCnisROinp_D^e_S^ra₍^t_o^io_nⁿ₎^P(PWW=<1101_N^m₀^1m_o0^s_st0^s_e)5^µs
Ta = 25°C
0.003 _{1 shot Pulse}
0.001 ^{1 Drive Operation}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V _DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
5
4
10V
5V
3
4V
2.5 V
2
1
V_GS = 2.0 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
5
4
3
2
–25°C
1
25°C
Tc = 75°C
V _DS = 10 V
Pulse Test
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
3