HAT2051T Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2051T
Reverse Drain Current vs.
Souece to Drain Voltage
5
Pulse Test
4
3
2
5V
1
V_GS = 0 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V _SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1 _0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.001
0.01
1shot
pulse
θ _{ch – f(t) =} γ _{s (t) •} θ _{ch – f}
θ _{ch – f = 166 °C/W, Ta = 25 °C}
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
D=
PW
T
0.0001
10 µ 100 µ 1 m 10 m 100 m 1
PW
T
10
100
1000 10000
Pulse Width PW (S)
6