HAT2051T Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2051T
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
ID=2A
0.2
1A
0.1
0.5 A
0
1
2
3
4
5
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
2.5 V
0.2
0.1
V_GS = 4 V
0.05
0.02
0.2
0.5 1 2
5 10 20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
0.4
0.3
I_D = 2, 1, 0.5 A
V_GS = 2.5 V
0.2
2, 1, 0.5 A
0.1
4V
0
Pulse Test
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
5
Tc = –25 °C
2
1
75 °C
0.5
25 °C
0.2
0.1
0.05
0.02
V _DS = 10 V
Pulse Test
0.05 0.1 0.2 0.5 1 2
Drain Current I _D (A)
4