HAT1043M Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

HAT1043M
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1 _0.5
0.2
0.1 ^0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
θ _{ch – f(t) =} γ _{s (t) •} θ _{ch – f}
θ _{ch – f = 119 °C/W, Ta = 25 °C}
When using the alumina ceramic board
(50x50x0.7 mm)
PDM
D=
PW
T
PW
0.0001
10 µ 100 µ 1 m 10 m 100 m 1
T
10
100 1000 10000
Pulse Width PW (S)
7