HAT1043M Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

HAT1043M
Silicon P Channel Power MOS FET
Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
• 2.5 V gate drive device can be driven from 3 V source
Outline
ADE-208-754D (Z)
5th Edition
February 1999
TSOP–6
12 5 6
DD D D
3
G
S
4
4
5
6
3
2
1
4
Source
3
Gate
1, 2, 5, 6 Drain