HAT1043M Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

HAT1043M
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-0.5
Pulse Test
-0.4
-0.3
I D = -5 A
-0.2
-0.1
-2 A
-1 A
0
-4 -8 -12 -16 -20
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
500
200
V_GS = -2.5 V
100
50
-4.5 V
20
10
-0.1 -0.2 -0.5 -1 -2
-5 -10 -20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150
I D = -5 A
100 _{-2.5 V}
-1, -2 A
-5 A
50
0
–50
V_GS = -4.5 V
-1, -2 A
0
50 100 150 200
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
V _DS = -10 V
20 Pulse Test
10
Tc = –25 °C
5
25 °C
2
1
75 °C
0.5
0.2
0.1
-0.1
-0.3 -1 -3 -10
Drain Current I _D (A)
-30 -50
4