HAT1043M Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
di / dt = 20 A / µs
V_GS = 0, Ta = 25 °C
10
-0.1 -0.2 -0.5 -1 -2 -5 -10
Reverse Drain Current I _DR (A)
HAT1043M
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0
-4
-8 -12 -16 -20
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
VDD = - 5 V
-10 V
-10
-20 V
-2
V_DS
-20
-4
-30
VDD = - 5 V
-10 V
-20 V
V_{GS -6}
-40
-8
I _D = -4.4 A
-500
4
-10
8
12 16 20
Gate Charge Qg (nc)
1000
Switching Characteristics
500
tr
200
tf
100
50
t _d(off)
t _d(on)
20
10
V_GS = -4.5 V, V _DD = -10 V
PW = 5 µs, duty < 1 %
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20
Drain Current I _D (A)
5