HAT1043M Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

Main Characteristics
Power vs. Temperature Derating
2.0
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature Ta (°C)
Test Condition
When using the alumina ceramic board
(50x50x0.7mm),(PW ≤ 5s)
HAT1043M
-100
Maximum Safe Operation Area
-30
10 µs
-10
-3
-1
-0.3
-0.1
DC
PW
Operation=(P1W0 ^ms
1 _ms
(1 _shot)
Operation in
this area is
limited by R _DS(on)
≤ _5s)
Note1
100 µs
-0.03 ^{Ta = 25°C}
1 shot pulse
-0.01
-0.1 -0.3 -1 -3 -10 -30 -100
Drain to Source Voltage V _DS (V)
Note 1 When using the alumina ceramic board
( 50x50x0.7mm)
Typical Output Characteristics
-10
-10 V
-4 V
-8
-3 V
-2.5 V
-6
Pulse Test
-2 V
-4
-2
V_GS = -1.5 V
0
-2
-4
-6
-8 -10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
-10
V _DS = -10 V
Pulse Test
-8
-6
-4
-2
75°C
Tc = –25°C
25°C
0
-1
-2
-3
-4
-5
Gate to Source Voltage V GS (V)
3