HAT1038R Datasheet, PDF (7/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1038R/HAT1038RJ
Reverse Drain Current vs.
Source to Drain Voltage
–10
–8
–6
–10 V
–4
V_GS = 0, 5 V
–5 V
–2
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Maximun Avalanche Energy vs.
Channel Temperature Derating
2.5
I _AP = –3.5 A
2.0
V _DD = –25 V
L = 100 µH
duty < 0.1 %
1.5
Rg > 50 Ω
1.0
0.5
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
-15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
E_AR =
1
2
• L • I _AP²â€¢
V_DSS
V_DSS – V _DD
I _AP
I_D
V_(BR)DSS
V_DS
VDD
0
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
-10 V
50Ω
VDD
= –30 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
t_f
7