HAT1038R Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1038R/HAT1038RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
– 60
V
Gate to source voltage
V_GSS
± 20
V
Drain current
I_D
– 3.5
A
Drain peak current
I Note1
D(pulse)
– 28
A
Body-drain diode reverse drain current
I _DR
– 3.5
A
Avalanche current
HAT1038R
I Note4
AP
—
—
HAT1038RJ
– 3.5
A
Avalanche energy
HAT1038R
E Note4
AR
—
—
HAT1038RJ
1.05
mJ
Channel dissipation
Pch ^Note2
2
W
Channel dissipation
Pch ^Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
2