HAT1038R Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1038R/HAT1038RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
–100
Maximum Safe Operation Area
–30
10 µs
–10
–3
–1
–0.3
–0.1
–0.03
PW
100
1 _ms
µs
Operation^Di^Cn^Operation
this area is
limited by R DS(on)
Ta = 25 °C
(PW
= _{10 ms}
< ₁^N₀o_{ste) 6}
–0.01 ^{1 shot pulse}
–0.1 –0.3 –1 –3 –10 –30
–100
Drain to Source Voltage V DS (V)
Note 6 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
–10
–10 V
–5 V
–8
–4 V
–3.5 V
Pulse Test
–6
–3 V
–4
–2
V_GS = –2.5 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
–10
V _DS = 10 V
Pulse Test
–8
–6
–4
Tc = 75 °C
25 °C
–2
–25 °C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
4