HAT1038R Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1038R/HAT1038RJ
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltage
HAT1038R I_DSS
drain current
HAT1038RJ I_DSS
Zero gate voltage
HAT1038R I_DSS
drain current
HAT1038RJ I_DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
– 60
± 20
—
—
—
—
—
– 1.2
—
—
3
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 5. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
± 10 µA
—
– 1 µA
—
– 0.1 µA
—
—
µA
—
–10 µA
—
– 2.2 V
0.12 0.15 Ω
0.16 0.23 Ω
4.5 —
S
600 —
pF
290 —
pF
75
—
pF
11
—
ns
30
—
ns
100 —
ns
55
—
ns
– 0.98 – 1.28 V
70
—
ns
Test Conditions
I_D = – 10 mA, V_GS = 0
I_G = ± 100 µA, V_DS = 0
V_GS = ± 16 V, V_DS = 0
V_DS = – 60 V, V_GS = 0
V_DS = – 48 V, V_GS = 0
Ta=125°C
V_DS = – 10 V, I _D = – 1 mA
I_D = – 2 A, V_GS = – 10 V ^Note5
I_D = – 2 A, V_GS = – 4 V ^Note5
I_D = – 2 A, V_DS = – 10 V ^Note5
V_DS = –10 V
V_GS = 0
f = 1MHz
V_GS = –10 V, I_D = – 2 A
V_DD ≅ – 30 V
IF = – 3. 5 A, V_GS = 0 ^Note5
IF = – 3. 5 A, V_GS = 0
diF/ dt = 50A/µs
3