HAT1038R Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1038R/HAT1038RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
I D = –2 A
–0.2
–1 A
–0.1
–0.5 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
V_GS = –4 V
0.1
–10 V
0.05
0.02
0.01
–0.1 –0.3 –1 –3 –10 –30
Drain Current I _D (A)
–100
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
0.2 ^VGS ^{= –4 V}
I D = –2 A
–1 A
–0.5 A
–2 A
0.1
–10 V
–0.5, –1 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
V _DS = 10 V
10 Pulse Test
Ta = –25 °C
5
25 °C
2
75 °C
1
0.5
0.2
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I _D (A)
5