HAT1038R Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1038R/HAT1038RJ
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 50 A / µs
V_GS = 0, Ta = 25 °C
5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I _DR (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
200
Coss
100
50
Crss
20
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
V _DD = –10 V I D = –3.5 A
–25 V
–20
–50 V
–4
–40
V _DS
–60
V _DD = –50 V
–80
–25 V
–10 V
V GS
–100
0
8
16 24 32
Gate Charge Qg (nc)
–8
–12
–16
–20
40
1000
300
100
30
10
Switching Characteristics
V _GS = –10 V, V _DD = –30 V
Pw = 5 µs, duty < 1 %
t _d(off)
tf
tr
t _d(on)
3
1
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I _D (A)
6