BB304M Datasheet, PDF (7/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 9 V
R _G = 560 k W
6V 5V 4V
24 _{f = 1 kHz}
18
3V
2V
12
6
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
BB304M
Power Gain vs. Gate Resistance
40
35
30
25
20
V _DS = 9 V
15
V _G1= 9 V
V _G2S = 6 V
f = 200 MHz
10
0.1 0.2 0.5 1 2
5 10
Gate Resistance R _G (M W )
Noise Figure vs. Gate Resistance
4
V _DS = 9 V
V _G1= 9 V
3 ^V G2S ^{= 6 V}
f = 200 MHz
2
1
0
0.1 0.2 0.5 1 2
5 10
Gate Resistance R_G (M W)
Power Gain vs. Drain Current
40
35
30
25
20 V DS = 9 V
V _G1= 9 V
15
V _G2S = 6 V
R_G= variable
f = 200 MHz
10
0
5 10 15 20 25 30
Drain Current I_D (mA)
7