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| BB304M Datasheet, PDF (4/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |||
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BB304M
Main Characteristics
Test Circuit for Operating Items (I D(o,p)|yfs|, Ciss, Coss, Crss, NF, PG)
VG2
Gate 2
RG
VG1
Gate 1
Drain
A
ID
Source
Power Gain, Noise Figure Test Circuit
VT
1000p
VG2
1000p
VT
1000p
Input(50 ¶)
1000p
1000p
47k
47k
BBFET
L1
36p
1000p
1SV70
R G 470k
47k
L2
1000p
Output(50 ¶)
10p max
RFC
1SV70
1000p
VD= VG1
L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Unit @Resistance @( ¶)
@ @ Capacitance @(F)
.
4
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