BB304M Datasheet, PDF (3/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB304M
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Input capacitance
c _iss
Output capacitance
c _oss
Reverse transfer capacitance c_rss
Drain current
I_D(op) 1
2.3
0.9
0.003
9
Typ
2.8
1.3
0.02
15
I_D(op) 2
—
13
Forward transfer admittance |y_fs|1 22
27
|y_fs|2
—
27
Power gain
PG1 24
29
PG2 —
29
Noise figure
NF1 —
1.2
NF2 —
1.2
Max
3.6
2.0
0.05
19
—
34
—
32
—
1.9
—
Unit
pF
pF
pF
mA
mA
mS
mS
dB
dB
dB
dB
Test Conditions
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G = 180kΩ, f = 1MHz
V_DS = 5V, V_G1 = 5V, V_G2S = 4V
R_G = 180kΩ
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 470kΩ
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G = 180kΩ, f = 1kHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 470kΩ, f = 1kHz
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G = 180kΩ, f = 200MHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 470kΩ, f = 200MHz
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G = 180kΩ, f = 200MHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 470kΩ, f = 200MHz
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