BB304M Datasheet, PDF (5/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
mbient Temperature Ta (°C)
BB304M
Typical Output Characteristics
25
V_G2S = 6 V
V _G1= V_DS
20
15
10
5646₈⁷⁸⁰₂⁰⁰₀^kkk_k^WWW_W
5
1M ^W
R G ^{= 1.5 M W}
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain Current vs.
Gate2 to Source Voltage
25
V _DS = V_G1 = 9 V
20
270 ^{k W}
330 ^{k W}
15
390 ^{k W}
10
470 ^{k W}
560 ^{k W}
680 ^{k W}
5
820 ^{k W}
1M ^W
R _G ^{= 1.5 M W}
0
1.2 2.4 3.8 4.8 6.0
Gate2 to Source Voltage V_G2S (V)
Drain Current vs. Gate1 Voltage
25
V _DS = 9 V
R _G = 390 k W
20
6V
5V
15
4V
10
3V
2V
5
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
5