BB304M Datasheet, PDF (6/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB304M
Drain Current vs. Gate1 Voltege
25
V _DS = 9 V
20 ^{R G = 470 k W}
15
6V
5V
4V
10
3V
2V
5
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate1 Voltege
25
V _DS = 9 V
20 ^{R G = 560 k W}
15
6V
5V
10
4V
3V
2V
5
V_G2S = 1 V
0
2
4
6
8
10
Q [ g1 d ‡ _G1 V
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 9 V
6V
R _G = 390 k W
5V
24 f = 1 kHz
4V
3V
2V
18
12
6
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 9 V
6V
R _G = 470 k W
5V
24 _{f = 1 kHz}
4V
3V
2V
18
12
6
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
6