BB304M Datasheet, PDF (1/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB304M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-605C (Z)
4th. Edition
August 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
(PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note: 1. Marking is “DW–”.
2. BB304M is individual type number of HITACHI BBFET.