2SK1880 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1880(L), 2SK1880(S)
Reverse Drain Current vs.
Source to Drain Voltage
2.0
Pulse Test
1.6
1.2
0.8 _{VGS = 10 V}
0.4
0 V, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (A)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
Tc = 25°C
0.3
0.1
0.03
0.2
0.1
0.05
0.02
0.01
1 ^{shot Pulse}
0.01
10 µ
100 µ
1m
10 m
Pulse Width PW (S)
θ ch – c(t) = ^γ s(t) ^. θ ch – c
θ ch – c = 6.25°C / W. Tc = 25°C
P DM
D
=
PW
T
PW
T
100 m
1
10
7