2SK1880 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1880(L), 2SK1880(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
V_(BR)DSS
600
—
voltage
Gate to source breakdown
voltage
V_(BR)GSS
±30
—
Gate to source leak current I_GSS
—
—
Zero gate voltage drain current I_DSS
—
—
Gate to source cutoff voltage V_GS(off)
2.0
—
Static drain to source on state R_DS(on)
—
6.5
resistance
Forward transfer admittance |y_fs|
0.85 1.4
Input capacitance
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note 1. Pulse Test
250
55
8
10
25
35
30
0.95
350
Max
—
—
±10
100
3.0
8.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
µs
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 500 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 1 A
V_GS = 10 V*¹
I_D = 1 A
V_DS = 20 V*¹
V_DS = 10 V
V_GS = 0
f = 1 MHz
I_D = 1 A
V_GS = 10 V
R_L = 30 Ω
I_F = 1.5 A, V_GS = 0
I_F = 1.5 A, V_GS = 0,
di_F / dt = 100 A / µs
3