2SK1880 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1880(L), 2SK1880(S)
Power vs. Temperature Derating
30
20
10
0
50
100
150
Case Temperature Tc (°C)
Typical Output Characteristics
2.0
5 V ^{Pulse Test}
10 V
1.6
4.5 V
1.2
0.8
4V
0.4
V_GS = 3.5 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
10
3
1
0.3
0.1
0.03
OpaerreabatyioiRsnliimn ^it(thoeinds)
DC
PW
= ₁₀
Operation
10
1
100
ms
µ_s
ms
(Tc
(1 _shot)
= _25°C)
µ_s
Ta = 25°C
0.01
0.1 0.3 1 3 10 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
2.0
Pulse Test
1.6 ^{VDS = 20 V}
1.2
0.8
75°C
Tc = 25°C
0.4
–25°C
0
2 4 6 8 10
Gate to Source Voltage V_GS (V)
4