2SK1880 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
I_D = 1.5 A
8
1A
4
0.5 A
0
4 8 12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
20
16
12
I_D = 1 A
8
4
0.5 A
–40 0 40 80 120 160
Case Temperature Tc (°C)
2SK1880(L), 2SK1880(S)
Static Drain to Source on State
Resistance vs. Drain Current
100
50 ^{Pulse Test}
20
10
V_GS = 10 V
5
2
1
0.05 0.1 0.2 0.5 1 2 5
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
5
Pulse Test
2 ^{VDS = 20 V}
Tc = –25°C
1
0.5
75°C
0.2
25°C
0.1
0.05
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
5