2SK1880 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1880(L), 2SK1880(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
600
V
±30
V
1.5
A
3.0
A
1.5
A
20
W
150
°C
–55 to +150
°C
2