2SK1880 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1880(L), 2SK1880(S)
5000
2000
1000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs
V_GS = 0
Ta = 25°C
Pulse Test
500
200
100
50
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
1000
20
I_D = 1.5 A
800
V_GS
16
V_DD = 100 V
250 V
600
400 V ¹²
V_DS
400
8
200
V_DD = 100 V
4
250 V
400 V
0
0
4 8 12 16 20
Gate Charge Qg (nc)
1000
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
Ciss f = 1 MHz
Coss
10
Crss
1
0 10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V
200
PW = 2 µs
duty ^<= 1%
100
V_DD =: 30 V
50
t _d(off)
t_f
t_r
20
t _d(on)
10
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
6