2SK1666 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Reverse Drain Current vs.
Source to Drain Voltage
100
Pulse Test
80
2SK1666
60
V_GS = 10 V
40
20
4V
0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
0.3 _0.2
0.1
0.1
0.05
0.03 ^0.02
0.01
1
shot
pulse
0.01
10 µ
100 µ
T_C = 25°C
θch–c (t) = γ_S (t) · θch–c
θch–c = 2.08°C/W, T_C = 25°C
P_DM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
7