2SK1666 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1666
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
60
V
±20
V
45
A
180
A
45
A
60
W
150
°C
–55 to +150
°C
2