2SK1666 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1666
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Maximum Safe Operation Area
500
300
100
30
10
3
Ta
Operation
10
=in2th5Di°_{sCCaOrpeeaPraWtio=n1(0T}C^m=s12(m151_°^{ss0Ch0)oµt)s}
µ_s
1 ^{is limited by RDS (on)}
0.5
0.1 0.3
13
10 30 100
Drain to Source Voltage V_DS (V)
Typical Output Characteristics
100
10 V 8 V
80
5V
Pulse Test
4.5 V
60
4V
40
3.5 V
20
V_GS = 3 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
40
V_DS = 10 V
Pulse Test
30
20
75°C
25°C
10
T_C = –25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
4