2SK1666 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1666
Body-Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs
200 ^{VGS = 0, Ta = 25°C}
100
50
20
10
5
2
5 10 20 50 100 200
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 35 A
80
16
60
12
V_DS
40
V_DD = 10 V
8
25 V
10 V
20
V_DD = 50 V
4
25 V
10 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
1,000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
10
V_GS = 0
f = 1 MHz
1
0
10
20
30
40
50
Drain to Source Voltage V_DS (V)
1,000
500
200
100
Switching Characteristics
t_{d (off)}
t_f
t_r
50
t_{d (on)}
20
V_GS = 10 V, V_DD =.. 30 V
PW = 2 µs, duty ≤ 1%
10
0.5 1 2
5 10 20 50
Drain Current I_D (A)
6