2SK1666 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
30 A
0.4
20 A
I_D = 10 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
2SK1666
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2 ^{Pulse Test}
0.1
0.05
0.02
V_GS = 4 V
V_GS = 10 V
0.01
0.005
2
5 10
20
50 100 200
Drain Current I_D (A)
Static Drain to Source on State
Resistance vs. Temperature
0.1
Pulse Test
0.08
0.06
0.04
I_D = 30 A
20 A
0.02
V_GS = 4 V
V_GS = 10 V
10 A
30 A
10 A, 20 A
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Forward Transfer Admittance
vs. Drain Current
100
Ta = –25°C
50
20
25°C
10
75°C
5
Pulse Test
2
V_DS = 10 V
1
0.5 1 2 5
10 20 50
Drain Current I_D (A)
5