2SK1666 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1666
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS 60
Gate to source breakdown
voltage
V_(BR)GSS ±20
Gate to source leak current
I _GSS
—
Zero gate voltage drain current I_DSS
—
Gate to source cutoff voltage V_GS(off) 1.0
Static drain to source on state R_DS(on) —
resistance
—
Forward transfer admittance |yfs|
20
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note: 1. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
250 µA
—
2.5
V
0.016 0.02 Ω
0.022 0.035 Ω
32
—
S
3950 —
pF
1920 —
pF
360 —
pF
30
—
ns
180 —
ns
630 —
ns
290 —
ns
1.3
—
V
140 —
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 50 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 20 A, V_GS = 10 V *¹
I_D = 20 A, V_GS = 4 V *¹
I_D = 20 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 20 A, V_GS = 10 V,
R_L = 1.5 Ω
I_F = 45 A, V_GS = 0
I_F = 45 A, V_GS = 0,
di_F/dt = 50 A/µs
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