BB301M Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301M
Drain Current vs. Gate1 Voltege
20
V_DS = 5 V
16 ^{RG = 100 kΩ}
12
8
2V
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 5 V
25 ^{R G = 82 k Ω}
f = 1 kHz
4V
20
3V
15
10
2V
5
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate1 Voltege
20
V_DS = 5 V
R_G = 150 kΩ
16
12
4V 3V
8
2V
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 5 V
25
R _G = 100 k Ω
f = 1 kHz
4V
20
3V
15
2V
10
5
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
6