BB301M Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
25
68 ^{k Ω}
20
82 ^{k Ω}
15
100 ^{k Ω}
120 ^{k Ω}
10
150 ^{k Ω}
180 ^k Ω
5
R _G = ^{220 k Ω}
V_DS = V_G1 = 5 V
0
1
2
3
4
5
Gate2 to Source Voltage V_G2S (V)
BB301M
Typical Output Characteristics
30
V_G2S = 4 V
25 V_G1 = V_DS
20
15
10
5
1118102285000k0kk^Ω_kk^{ΩΩΩΩ}
RG ^{= 220 kΩ}
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 82 kΩ
16
12
8
2V
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
5